Manufacture

The semiconductors of the periodic table of the chemical elements were identified as the most likely materials for a solid state vacuum tube by researchers like William Shockley at Bell Laboratories starting in the 1930s. Starting with copper oxide, proceeding to germanium, then silicon, the materials were systematically studied in the 1940s and 1950s. Today, silicon monocrystals are the main substrate used for integrated circuits (ICs) although some III-V compounds of the periodic table such as gallium arsenide are used for specialised applications like LEDs, lasers, solar cells and the highest-speed integrated circuits. It took decades to perfect methods of creating crystals without defects in the crystalline structure of the semiconducting material.
Semiconductor ICs are fabricated in a layer process which includes these key process steps:
Imaging Deposition Etching The main process steps are supplemented by doping, cleaning and planarisation steps.
Mono-crystal silicon wafers (or for special applications, silicon on sapphire or gallium arsenide wafers) are used as the substrate. Photolithography is used to mark different areas of the substrate to be doped or to have polysilicon, insulators or metal (typically aluminium) tracks deposited on them.
Integrated circuits are composed of many ovelapping layers, each defined by photolithography, and normally shown in different colors. Some layers mark where various dopants are diffused into the substrate (called diffusion layers), some define where additional ions are implanted (implant layers), some define the conductors (polysilicon or metal layers), and some define the connections between the conducting layers (via or contact layers). All components are constructed from a specific combination of these layers. In a self-aligned CMOS process, a transistor is formed wherever the gate layer (polysilicon or metal) crosses a diffusion layer. Resistive structures, meandering stripes of varying lengths, form the loads on the circuit. The ratio of the length of the resistive structure to its width, combined with its sheet resistivity determines the resistance. Capacitive structures, in form very much like the parallel conducting plates of a traditional electrical capacitor, are formed according to the area of the "plates", with insulating material between the plates. Owing to limitations in size, only very small capacitances can be created on an IC. More rarely, inductive structures can be built as tiny on-chip coils, or simulated by gyrators.